Route to a direct-gap silicon allotrope Si32
1Department of Physics, Rutgers University, Newark, NJ 07102, United States of America.
Abstract:
Using swarm-intelligence-based structure prediction methods, we predict a novel direct bandgap silicon allotrope with open channels at ambient conditions. This silicon phase, termed Si32, can be produced by removing Sr atoms from a newCmcm-SrSi8clathrate-like compound, which is calculated to be thermodynamically stable under epitaxial strain at high pressures. Si32is predicted to have a direct bandgap of ∼1.15 eV and exceptional optical properties. The prediction of novel silicon clathrate-like structure paves the way for the exploration of novel silicon phases with extensive application possibilities.
Related Concept Videos
Types of Semiconductors
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...


