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Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density.
Chiao Chang1, Hung-Hsiang Cheng1, Gary A Sevison2,3
1Center for Condense Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan.
Materials (Basel, Switzerland)
|February 15, 2022
Summary
This study reveals optimal operating optical power ranges for Germanium-Tin (GeSn) photodetectors. We observed how photocurrent and responsivity change with light intensity, identifying key carrier recombination mechanisms.
Area of Science:
- Semiconductor Physics
- Optoelectronics
- Materials Science
Background:
- Germanium-Tin (GeSn) alloys are promising for optoelectronic applications.
- Understanding photodetector performance under varying light conditions is crucial.
Purpose of the Study:
- To investigate the photo-response of GeSn-based photodetectors.
- To determine the impact of incident optical power intensity on device performance.
- To identify carrier recombination mechanisms.
Main Methods:
- Utilized a tunable laser to vary incident light power.
- Measured photocurrent and responsivity.
- Performed time-resolved measurements to analyze carrier dynamics.
Main Results:
- Observed an exponential increase in photocurrent with higher optical power.
- Noted an exponential decay in responsivity at higher optical power intensities.
- Identified monomolecular and bimolecular recombination mechanisms based on optical power.
Conclusions:
- Established the appropriate range of optical power intensity for GeSn photodetector operation.
- Provided insights into the carrier recombination dynamics in GeSn photodetectors.
