Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

P-N junction01:11

P-N junction

737
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
737
Joule-Thomson Effect01:21

Joule-Thomson Effect

5.9K
The Joule-Thomson effect, also known as the Joule-Kelvin effect, describes the temperature change of a fluid when it is forced through a valve or porous plug while keeping it in a thermally insulated environment. This experiment is called a throttling process. This is an important effect widely used in refrigeration and the liquefaction of gases.
This experiment forces high-pressure gas through a throttle valve or a porous plug to a lower-pressure region. The gas expands as it passes through to...
5.9K
Schottky Barrier Diode01:27

Schottky Barrier Diode

539
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
539
Thermodynamic Potentials01:26

Thermodynamic Potentials

1.0K
Thermodynamic potentials are state functions that are extremely useful in analyzing a thermodynamic system. They have dimensions of energy. The four important thermodynamic potentials are internal energy, enthalpy, Helmholtz free energy, and Gibbs free energy. These thermodynamic potentials can be expressed using two of the following variables: pressure, volume, temperature, and entropy. These two variables are expressed as the rate of change of the thermodynamic potential with respect to other...
1.0K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

359
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
359
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

555
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
555

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

An argument why the spinterface model cannot explain the chirality induced spin selectivity effect.

The Journal of chemical physics·2026
Same author

Dynamic breaking of mirror symmetry in spin-dependent electron transport through chiral media causes enantiomeric excesses.

Science advances·2026
Same author

Temperature-Enhanced Coercive Field by Chiral Molecules.

The journal of physical chemistry letters·2026
Same author

Chiral-Encoded Pt-Ir Surfaces as Apparent Spin Filter for Enhanced Oxygen Reduction.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Boosting superconductivity in ultrathin YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-δ</sub> films via nanofaceted substrates.

Nature communications·2026
Same author

What Does It Take for an Organic Closed Shell Molecule to Become Magnetic?

The journal of physical chemistry letters·2025

Related Experiment Video

Updated: Oct 3, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.8K

Thermodefect voltage in graphene nanoribbon junctions.

Alhun Aydin1, Altug Sisman2, Jonas Fransson2

  • 1Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, United States of America.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|February 15, 2022
PubMed
Summary

We introduce thermodefect voltage in graphene nanoribbon junctions. Defects in one nanoribbon induce significant voltage, tunable by defect type and location, offering a new path for nanomaterial thermoelectric enhancement.

Keywords:
defectgraphenethermoelectricity

More Related Videos

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

7.4K
Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

7.8K

Related Experiment Videos

Last Updated: Oct 3, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.8K
Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

7.4K
Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

7.8K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Thermoelectric junctions typically use dissimilar materials.
  • Single-material junctions are explored for quantum and classical effects in nanostructures.

Purpose of the Study:

  • Introduce defect-induced thermoelectric voltage (thermodefect voltage) in graphene nanoribbon (GNR) junctions.
  • Investigate the influence of defects on thermoelectric properties in GNRs.

Main Methods:

  • Computational modeling of GNR junctions with varying defect types, locations, widths, and edge configurations.
  • Analysis of Seebeck coefficient, electrical conductance, and electronic thermal conductance.

Main Results:

  • Demonstrated significant thermodefect voltage, reaching 1.7 mV K⁻¹ for specific defects in semiconducting armchair GNRs.
  • Showcased high sensitivity of thermodefect voltage to defect characteristics and GNR geometry.
  • Identified key parameters influencing thermoelectric performance.

Conclusions:

  • Defect engineering in GNRs offers a novel route to generate thermoelectric voltage.
  • Thermodefect voltage is a promising mechanism for enhancing thermoelectric properties of nanomaterials.
  • The study provides insights into tuning thermoelectric performance through controlled defect introduction.