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Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg

Shiqiang Lu1, Tongchang Zheng2, Ke Jiang3

  • 1Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China. linwei@xmu.edu.cn.

Physical Chemistry Chemical Physics : PCCP
|February 16, 2022
PubMed

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