You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Oct 3, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
David T Fullwood1, Sarah Sanderson1, Sterling Baird1
1Department of Mechanical Engineering, Brigham Young University, Provo, UT84602, USA.
Accurately determining crystalline material geometry requires accounting for the excitation volume (EV) in electron backscatter diffraction (EBSD) data. Transition curves improve grain boundary (GB) positioning accuracy, highlighting limitations of standard EBSD software.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: