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Passive Photonic Integrated Circuits Elements Fabricated on a Silicon Nitride Platform
Marcin Lelit1,2, Mateusz Słowikowski1,2, Maciej Filipiak2
1Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland.
Materials (Basel, Switzerland)
|February 25, 2022
Summary
Silicon nitride photonic integrated circuits leverage microelectronics fabrication for developing essential optical components. This study details the design and successful fabrication of waveguides, MMIs, and AWGs, confirming the technology's potential.
Area of Science:
- Photonics and Materials Science
- Integrated Optics
- Microelectronics Fabrication
Background:
- Silicon nitride (SiN) photonic integrated circuits (PICs) share fabrication foundations with microelectronics.
- SiN PICs offer advantages over electronics, including fewer manufacturing steps and larger critical dimensions for passive structures.
Purpose of the Study:
- To present initial results on the design and development of fundamental building blocks for a SiN integrated photonic platform.
- To cover the complete design and manufacturing chain, from simulation to characterization.
Main Methods:
- Numerical simulations of optical elements.
- Design and fabrication of test structures.
- Optical characterization and analysis of results.
Main Results:
- Developed and evaluated technological processes for fabricating waveguides (WGs).
- Developed and evaluated technological processes for fabricating multimode interferometers (MMIs).
- Developed and evaluated technological processes for fabricating arrayed waveguide gratings (AWGs).
Conclusions:
- The developed fabrication processes confirm the potential of silicon nitride for integrated photonics.
- The proposed approach for designing and fabricating SiN photonic components is validated.
