Photoluminescence Spectroscopy of the InAsSb-Based p-i-n Heterostructure

Photoluminescence in a double heterostructure based on a ternary InAsSb solid solution was observed in the mid-infrared range of 2.5-4 μm. A range of compositions of the InAs_1-ySb_y ternary solid solution has been established, where the energy resonance between the band gap and the splitting-off band in the valence band of the semiconductor can be achieved. Due to the impact of nonradiative Auger recombination processes, different temperature dependence of photoluminescence intensity was found for the barrier layer and the narrow-gap active region, respectively. It was shown that efficient high-temperature photoluminescence can be achieved by suppressing the nonradiative Auger recombination (CHHS) process. Increased temperature, for which the energy gap is lower than the split-off band energy, leads to violation of the resonance condition in narrow gap antimonide compounds, which explains the observed phenomenon. This finding might influence future application of the investigated material systems in mid-infrared emitters used for, e.g., optical gas sensing.