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A Dual-Mode 303-Megaframes-per-Second Charge-Domain Time-Compressive Computational CMOS Image Sensor
Keiichiro Kagawa1, Masaya Horio2, Anh Ngoc Pham2
1Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan.
Sensors (Basel, Switzerland)
|March 10, 2022
Summary
This study introduces the fastest solid-state image sensor at 303 megaframes per second. It achieves this using temporal compressive sensing in the charge domain, enabling high-speed imaging for applications like laser processing and time-of-flight depth imaging.
Area of Science:
- Electrical Engineering
- Computer Vision
- Optics
Background:
- Solid-state image sensors are crucial for high-speed imaging, but current technologies face limitations in frame rates.
- Achieving ultra-high frame rates typically requires complex analog circuitry, increasing power consumption and noise.
- Advanced imaging techniques are needed to capture transient phenomena and improve depth perception.
Purpose of the Study:
- To demonstrate an ultra-high-speed computational CMOS image sensor with a record burst frame rate.
- To enable dual-mode operation (single-event or multi-exposure) for versatile imaging applications.
- To achieve high frame rates with low noise, small pixel size, and reduced power consumption.
Main Methods:
- Developed a CMOS image sensor with a burst frame rate of 303 megaframes per second.
- Implemented temporal compressive sensing directly in the charge domain, eliminating the need for analog circuits.
- Utilized macropixels with 2x2 4-tap subpixels and optimized charge modulator drivers.
- Designed for dual-mode operation: single-event filming and multi-exposure imaging.
Main Results:
- Achieved the fastest solid-state image sensor frame rate to date (303 megaframes per second).
- Demonstrated single-event imaging of plasma emission and multi-exposure transient imaging of light reflections.
- Successfully performed time-of-flight (TOF) depth imaging with an 8x compression ratio, reproducing time-resolved images in a single shot.
- Achieved small pixel size, low noise, and low power consumption.
Conclusions:
- The developed ultra-high-speed CMOS image sensor pushes the boundaries of solid-state imaging capabilities.
- Temporal compressive sensing in the charge domain is an effective method for achieving high frame rates with efficiency.
- The sensor's dual-mode operation and advanced imaging capabilities offer significant potential for scientific and industrial applications, including enhanced depth imaging.
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