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Updated: Sep 29, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with
Chan-Hee Jang1, Hyun-Seop Kim1,2, Hyungtak Kim1
1School of Electrical and Electronic Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Korea.
Abstract:
In this study, we evaluated the temperature- and frequency-dependent ferroelectric characteristics of TiN/undoped HfO2/TiN metal-ferroelectric-metal (MFM) capacitors in which an undoped HfO2 film was deposited through atomic layer deposition (ALD). Successful ferroelectric characteristics were achieved after postdeposition annealing at 650 °C, which exhibited a remanent polarization of 8 μC/cm2 and a coercive electric field of 1.6 MV/cm at 25 °C (room temperature). The ferroelectric property was maintained at 200 °C and decreased as the temperature increased. The ferroelectric property was completely lost above 320 °C and fully recovered after cooling. The frequency dependency was evaluated by bias-dependent capacitance-voltage and s-parameter measurements, which indicated that the ferroelectric property was maintained up to several hundred MHz. This study reveals the ultimate limitations of the application of an undoped HfO2 MFM capacitor.
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