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Related Experiment Video

Updated: Sep 29, 2025

Gradient Echo Quantum Memory in Warm Atomic Vapor

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

Gating Orbital Memory with an Atomic Donor.

Elze J Knol¹, Brian Kiraly¹, Alexander N Rudenko¹

¹Institute for Molecules and Materials, Radboud University, Nijmegen 6525AJ, Netherlands.

Physical Review Letters

|March 25, 2022

Summary

This summary is machine-generated.

Atomic orbital memory, utilizing stable valencies, is influenced by local electric fields. A copper donor atom significantly altered the state favorability of a cobalt atom on black phosphorus.

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Area of Science:

Quantum computing
Materials science
Surface science

Background:

Orbital memory relies on two stable, electrically switchable valencies.
Understanding electric field effects on atomic-scale memory is crucial for future electronics.

Purpose of the Study:

To investigate the influence of a local electric field, generated by a copper donor, on the orbital memory of a cobalt atom.
To quantify the impact of the electric field on the charging energy and stochastic behavior of the cobalt atom.

Main Methods:

Utilized low-temperature scanning tunneling microscopy and spectroscopy to study individual atoms.
Performed ab initio calculations based on density functional theory to model and corroborate experimental findings.

Main Results:

Characterized the electronic properties of individual copper donors.
Observed a significant, distance-dependent influence of the copper donor on the cobalt atom's state favorability.
Found a strong impact on state favorability, particularly in the stochastic regime.

Conclusions:

Local electric fields from atomic donors strongly affect atomic orbital memory.
Provides quantitative insights into controlling atomic-scale electronic states for potential memory applications.