Related Experiment Video
Updated: Sep 29, 2025
10:31
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
8.7K
A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances.
Jingwei Guo1, Shengdong Hu1, Ping Li1,2
1Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.
Micromachines
|March 26, 2022
Summary
This study introduces a novel compound buffer layer for high electron mobility transistors (HEMTs), significantly boosting breakdown voltage without compromising performance. The new design enhances device reliability for power electronics applications.
Area of Science:
- Materials Science
- Semiconductor Physics
- Electrical Engineering
Background:
- High electron mobility transistors (HEMTs) are crucial for high-frequency and high-power applications.
- Improving breakdown voltage in HEMTs is essential for enhanced device reliability and performance.
- Current buffer layer designs often face trade-offs between breakdown voltage and dynamic characteristics.
Purpose of the Study:
- To propose and analyze a novel AlGaN/Si3N4 compound buffer layer HEMT structure.
- To investigate the impact of the compound buffer layer on device breakdown performance.
- To optimize structural parameters for improved device characteristics.
Main Methods:
- Technology Computer-Aided Design (TCAD) simulations were employed for device analysis.
- A compound buffer layer integrating Si3N4 within the AlGaN buffer was designed.
- Key structural parameters, including gate-drain distance, were optimized.
- Performance metrics such as OFF-state breakdown voltage (BV) and specific ON-state resistance (Ron,sp) were evaluated.
Main Results:
- The proposed HEMT with a 6 μm gate-drain distance achieved an OFF-state breakdown voltage (BV) of 881 V.
- The specific ON-state resistance (Ron,sp) was measured at 3.27 mΩ·cm².
- Compared to conventional designs, the breakdown voltage increased by 148% (vs. conventional field plate HEMT) and 94% (vs. drain connected field plate HEMT).
Conclusions:
- The AlGaN/Si3N4 compound buffer layer effectively enhances the breakdown voltage of HEMTs.
- This enhancement is achieved by introducing a high electric field via a vertical field plate effect into the buffer region.
- The proposed structure offers superior breakdown performance without sacrificing dynamic characteristics or increasing fabrication complexity.
