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Updated: Sep 29, 2025

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A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances.

Jingwei Guo1, Shengdong Hu1, Ping Li1,2

  • 1Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.

Micromachines
|March 26, 2022
PubMed
Summary
This summary is machine-generated.

This study introduces a novel compound buffer layer for high electron mobility transistors (HEMTs), significantly boosting breakdown voltage without compromising performance. The new design enhances device reliability for power electronics applications.

Keywords:
AlGaN/GaN HEMTbreakdown voltagebuffer layerelectric field

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Electrical Engineering

Background:

  • High electron mobility transistors (HEMTs) are crucial for high-frequency and high-power applications.
  • Improving breakdown voltage in HEMTs is essential for enhanced device reliability and performance.
  • Current buffer layer designs often face trade-offs between breakdown voltage and dynamic characteristics.

Purpose of the Study:

  • To propose and analyze a novel AlGaN/Si3N4 compound buffer layer HEMT structure.
  • To investigate the impact of the compound buffer layer on device breakdown performance.
  • To optimize structural parameters for improved device characteristics.

Main Methods:

  • Technology Computer-Aided Design (TCAD) simulations were employed for device analysis.
  • A compound buffer layer integrating Si3N4 within the AlGaN buffer was designed.
  • Key structural parameters, including gate-drain distance, were optimized.
  • Performance metrics such as OFF-state breakdown voltage (BV) and specific ON-state resistance (Ron,sp) were evaluated.

Main Results:

  • The proposed HEMT with a 6 μm gate-drain distance achieved an OFF-state breakdown voltage (BV) of 881 V.
  • The specific ON-state resistance (Ron,sp) was measured at 3.27 mΩ·cm².
  • Compared to conventional designs, the breakdown voltage increased by 148% (vs. conventional field plate HEMT) and 94% (vs. drain connected field plate HEMT).

Conclusions:

  • The AlGaN/Si3N4 compound buffer layer effectively enhances the breakdown voltage of HEMTs.
  • This enhancement is achieved by introducing a high electric field via a vertical field plate effect into the buffer region.
  • The proposed structure offers superior breakdown performance without sacrificing dynamic characteristics or increasing fabrication complexity.