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Updated: Sep 28, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Synaptic Emulation via Ferroelectric P(VDF-TrFE) Reinforced Charge Trapping/Detrapping in Zinc-Tin Oxide Transistor
Ching-Kang Shen1, Rajneesh Chaurasiya1, Kuan-Ting Chen1
1Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan.
Abstract:
Brain inspired artificial synapses are highly desirable for neuromorphic computing and are an alternative to a conventional computing system. Here, we report a simple and cost-effective ferroelectric capacitively coupled zinc-tin oxide (ZTO) thin-film transistor (TFT) topped with ferroelectric copolymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) for artificial synaptic devices. Ferroelectric dipoles enhance the charge trapping/detrapping effect in ZTO TFT, as confirmed by the transfer curve (ID-VG) analysis. This substantiates superior artificial synapse responses in ferroelectric-coupled ZTO TFT because the current potentiation and depression are individually improved. The ferroelectric-coupled ZTO TFT successfully emulates the essential features of the artificial synapse, including pair-pulsed facilitation (PPF) and potentiation/depression (P/D) characteristics. In addition, the device also mimics the memory consolidation behavior through intensified stimulation. This work demonstrates that the ferroelectric-coupled ZTO synaptic transistor possesses great potential as a hardware candidate for neuromorphic computing.
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