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Thermally Activated Negative Differential Resistance VOx Memristor with Switchable Rate and Leaky Integrate-and-Fire

Li-Chung Shih1, Zih-Siao Liao1, Gennady Cherkashinin2

  • 1Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.

ACS Nano
|October 13, 2025
PubMed

Keywords:
VOx threshold switching neuron memristorinsulator-to-metal transitionleaky integrate-and-fire neuron modelnegative differential resistancespiking encoder

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