Related Experiment Video
Updated: Sep 28, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Creating Unidirectional Fast Ion Diffusion Channels in G/NiS2 -MoS2 Heterostructures for High-Performance Sodium-Ion
Jianhua Huang1, Yongsheng Yao2, Ming Huang1
1College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China.
Abstract:
Exploring novel electrode composites and their unique interface physics plays a significant role in tuning electrochemical properties for boosting the performance of sodium-ion batteries (SIBs). Herein, mixed-dimensional G/NiS2 -MoS2 heterostructures are synthesized in a low-cost meteorological vulcanization process. The stable graphene supporting layer and nanowire heterostructure guarantee an outstanding structural stability to tolerate certain volume changes during the charge/discharge process. The rational construction of NiS2 -MoS2 heterostructures induces abundant interfaces and unique ion diffusion channels, which render fast electrochemical kinetics and superior reversible capacities for high-performance SIBs. Interestingly, theoretical studies reveal that the anisotropic diffusion barriers create unidirectional "high-speed" channels, which can lead to ordered and fast Na+ insertion/extraction in designed heterostructures. G/NiS2 -MoS2 anode exhibits a high capacity of 509.6 mA h g-1 after 500 cycles and a coulombic efficiency >99% at 0.5 A g-1 , which also displays excellent cycling performance with the capacity of 383.8 mA h g-1 after the 1000 cycles at 5 A g-1 . Furthermore, full cells are constructed exhibiting a high capacity of 70 mA h g-1 at 0.1 A g-1 after 150 cycles and applied to light LEDs. This study provides a feasible strategy of constructing mixed-dimensional heterostructures for SIBs with excellent performance and a long service lifetime.
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
P-N junction
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Ion Channels
Ion channels are specialized integral membrane proteins on the plasma membrane that allow...

