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    Area of Science:

    • Optoelectronics
    • Biomedical Imaging
    • Nanotechnology

    Background:

    • Near-infrared (NIR) excitation offers advantages in biomedical applications.
    • NIR light interaction with silicon presents challenges for imaging sensors.
    • Existing optical filters struggle to completely eliminate NIR background noise.

    Purpose of the Study:

    • To develop an optics-free CMOS image sensor for filter- and lens-less imaging of NIR-excited upconverting nanoparticles.
    • To overcome the limitations of NIR background noise in silicon-based sensors.
    • To enable new possibilities for intraoperative imaging and diagnostics.

    Main Methods:

    • Novel time-gated dual-photodiode pixel design for background cancellation.
    • Pixel-level curve fitting and calibration to mitigate non-linear effects.
    • Integration of angle-selective gratings and correlated double sampling schemes.

    Main Results:

    • Achieved significant reduction of NIR background from hundreds of mV to single-digit mV.
    • Demonstrated successful imaging of NIR-excited upconverting nanoparticles on USAF resolution targets.
    • Attained a signal-to-noise ratio (SNR) of 15 dB with minimal NIR background (< 6 mV).

    Conclusions:

    • The optics-free CMOS sensor effectively images NIR-excited upconverting nanoparticles.
    • The dual-photodiode design provides superior NIR background suppression compared to optical filters.
    • The compact, thin, and surgically compatible sensor design opens avenues for advanced biomedical imaging.