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Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device
Hee Ju Shin1,2, Hyun Kyu Seo1, Su Yeon Lee1
1Artificial Intelligence Convergence Research Lab, Sahmyook University, Seoul 01795, Korea.
Materials (Basel, Switzerland)
|April 12, 2022
Summary
Researchers developed durable quad-level cell (QLC) resistive random access memory (RRAM) devices. These devices exhibit reliable 4 bits/cell operation with excellent endurance and data retention for advanced memory applications.
Area of Science:
- Materials Science
- Electrical Engineering
- Solid-State Physics
Background:
- Resistive switching memory offers high density and low power consumption.
- Quad-level cell (QLC) technology enables increased data storage capacity.
- Achieving reliable QLC operation in scaled devices remains a challenge.
Purpose of the Study:
- To investigate the potential of TiN/AlOx:Ti/TaOx/TiN bilayer structures for QLC RRAM.
- To optimize programming algorithms for enhanced memory characteristics.
- To evaluate the reliability of QLC operation in sub-micrometer RRAM devices.
Main Methods:
- Fabrication of TiN/AlOx:Ti/TaOx/TiN bilayer resistive switching memory devices.
- Implementation of the Incremental Step Pulse Programming (ISPP) algorithm for device characterization.
- Assessment of nonvolatile memory characteristics, including operation current and 4 bits/cell state optimization.
- Evaluation of QLC reliability through cycle endurance and data retention tests at elevated temperatures.
Main Results:
- The TiN/AlOx:Ti/TaOx/TiN devices demonstrated excellent durability.
- Optimal 4 bits/cell states and lowest operation current were achieved using the ISPP algorithm.
- Superior QLC reliability was confirmed with cycle endurance exceeding 1 k cycles per level and data retention over 2 hours at 125 °C.
- Successful implementation in sub-micrometer scaled RRAM devices.
Conclusions:
- Bilayer TiN/AlOx:Ti/TaOx/TiN structures are highly promising for QLC RRAM.
- The ISPP algorithm is effective in optimizing 4 bits/cell operations for RRAM.
- The demonstrated reliability metrics indicate the viability of these devices for advanced, high-density memory solutions.
