Suppressing PEDOT:PSS Doping-Induced Interfacial Recombination Loss in Perovskite Solar Cells

PSS is widely used as a hole transport layer (HTL) in perovskite solar cells (PSCs) due to its facile processability, industrial scalability, and commercialization potential. However, PSCs utilizing PEDOT:PSS suffer from strong recombination losses compared to other organic HTLs. This results in lower open-circuit voltage (V _OC) and power conversion efficiency (PCE). Most studies focus on doping PEDOT:PSS to improve charge extraction, but it has been suggested that a high doping level can cause strong recombination losses. Herein, we systematically dedope PEDOT:PSS with aqueous NaOH, raising its Fermi level by up to 500 meV, and optimize its layer thickness in p-i-n devices. A significant reduction of recombination losses at the dedoped PEDOT:PSS/perovskite interface is evidenced by a longer photoluminescence lifetime and higher magnitude of surface photovoltage, leading to an increased device V _OC, fill factor, and PCE. These results provide insights into the relationship between doping level of HTLs and interfacial charge carrier recombination losses.