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Related Experiment Video

Updated: Sep 25, 2025

Imaging Replicative Domains in Ultrastructurally Preserved Chromatin by Electron Tomography

Imaging Replicative Domains in Ultrastructurally Preserved Chromatin by Electron Tomography

Published on: May 20, 2022

Material-specific high-resolution table-top extreme ultraviolet microscopy.

Wilhelm Eschen^1,2, Lars Loetgering^3,4,5, Vittoria Schuster^3,4

¹Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena, Albert-Einstein-Str. 15, 07745, Jena, Germany. wilhelm.eschen@uni-jena.de.

Light, Science & Applications

|April 29, 2022

Summary

This summary is machine-generated.

Extreme ultraviolet (EUV) microscopy offers high-resolution, material-specific imaging of 3D structures. This study demonstrates 16nm resolution using advanced ptychography, enabling detailed analysis of semiconductor devices.

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$Characterization of Ultra-fine Grained and Nanocrystalline Materials Using Transmission Kikuchi Diffraction$

Characterization of Ultra-fine Grained and Nanocrystalline Materials Using Transmission Kikuchi Diffraction

Published on: April 1, 2017

Area of Science:

Physics
Materials Science
Nanotechnology

Background:

Extreme ultraviolet (EUV) radiation provides high material contrast and penetration depth for nanoscale imaging.
Existing EUV microscopy methods face limitations in resolution and field of view.

Purpose of the Study:

To develop and demonstrate a high-resolution, material-specific EUV microscopy technique.
To enable nano-scale imaging of complex 3D structures for material science and semiconductor applications.

Main Methods:

Utilized a table-top EUV source with high photon flux at 13.5 nm wavelength.
Implemented an interferometrically stabilized ptychography setup with structured EUV illumination.
Developed mixed-state orthogonal probe relaxation ptychography for robust phase-contrast imaging.

Main Results:

Achieved a half-pitch lateral resolution of 16 nm.
Successfully reconstructed the complex transmission of an integrated circuit.
Enabled classification of material composition in mesoscopic semiconductor systems.

Conclusions:

EUV ptychography offers a powerful tool for high-resolution, material-specific imaging of nanoscale structures.
The developed technique advances capabilities in semiconductor metrology and nano-device analysis.
This method allows for detailed investigation of complex 3D materials at the nanoscale.