Related Experiment Video
Updated: Sep 24, 2025

Fabricating Nanogaps by Nanoskiving
Published on: May 13, 2013
Smooth gap tuning strategy for cove-type graphene nanoribbons
Tiago de Sousa Araújo Cassiano1, Fábio Ferreira Monteiro1, Leonardo Evaristo de Sousa2
1Institute of Physics, University of Brasília Brazil pedrohenrique@unb.br.
Abstract:
Graphene is a carbon-based material with an extensive range of promising properties. Since it does not present a bandgap, graphene is not suitable for optoelectronic applications. One possible way to open a gap is achieved by reducing graphene to its nanoribbon (GNR) form. Recently, a GNR with well defined cove-type periphery proper for large-scale production was synthesized showing an energy bandgap of 1.88 eV. In this work, we propose an edge termination strategy that allows for smoothly tuning the energy bandgap of cove-type GNRs by systematically changing the periodicity with which armchair-like and zigzag-like edges alternate. Using an extended two-dimensional Su-Schrieffer-Heeger tight-binding model we compare the effects of this edge termination process on lattice deformation with those arising from changes in nanoribbon width. Results show that modifications to the edges of cove-type GNRs are able to smoothly reduce energy bandgaps at the expense of losses in conjugation and increased morphological spreading. Energy band gap values starting from ≈3 eV to almost 0 eV were obtained. The flexibility provided by this gap tuning procedure places the cove-type GNR as an interesting candidate material for optoelectronic applications.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Problem-Solving: Tuning of a Guitar String
The string's wave speed can be regulated by varying the linear density. Tension is the other property that determines the speed of...
Spin–Spin Coupling Constant: Overview
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Spin–Spin Coupling: One-Bond Coupling

