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Tunable nanostructured distributed Bragg reflectors for III-nitride optoelectronic applications
Bin Wei1,2, Yingkuan Han2, Yanhao Wang1
1Institute of Marine Science and Technology, Shandong University Qingdao 266237 China yuzhang@sdu.edu.cn.
RSC Advances
|May 6, 2022
Summary
This study developed nanostructured Gallium Nitride (GaN)-based distributed Bragg reflectors (DBRs) using electrochemical etching. These highly reflective and conductive DBRs enhance GaN optoelectronic devices like micro-LEDs.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Highly reflective and conductive distributed Bragg reflectors (DBRs) are crucial for III-nitride optoelectronic devices.
- Existing DBRs face challenges with lattice matching and process control.
Purpose of the Study:
- To fabricate and optimize nanostructured GaN-based DBRs for improved performance in optoelectronics.
- To achieve uniform, highly reflective, and conductive reflectors on a wafer scale.
Main Methods:
- Utilized electrochemical etching (EC) in various electrolytes.
- Employed the transfer-matrix method (TMM) for simulation and optimization.
- Fabricated nanostructured GaN-based DBRs.
Main Results:
- Achieved high reflectivity (>93%) and a broad stopband (~80 nm) using EC in neutral sodium nitrate.
- Demonstrated tunable DBR layer thickness for full visible spectrum coverage.
- Observed significant photoluminescence (PL) and light-out power enhancements (6x and 150%) in micro-LEDs without electrical degradation.
Conclusions:
- Nanostructured GaN-based DBRs offer a promising solution for high-performance GaN optoelectronics.
- This technology can advance applications in flexible devices and biomedical sensors.
