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Updated: Sep 24, 2025

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries
Published on: April 22, 2013
Preparation of a CuGaSe2 single crystal and its photocathodic properties
Shigeru Ikeda1, Wakaba Fujita1, Riku Okamoto1
1Department of Chemistry, Konan University Kobe Hyogo 658-8501 Japan s-ikeda@konan-u.ac.jp.
Abstract:
Chalcopyrite CuGaSe2 single crystals were successfully synthesized by the flux method using a home-made Bridgman-type furnace. The grown crystals were nearly stoichiometric with a Se-poor composition. Although a wafer form of the thus-obtained single crystal showed poor p-type electrical properties due to such unfavorable off-stoichiometry, these properties were found to be improved by applying a post-annealing treatment under Se vapor conditions. As a result, an electrode derived from the Se-treated single crystalline wafer showed appreciable p-type photocurrents. After deposition of a CdS ultrathin layer and a nanoparticulate Pt catalyst on the surface of the electrode, appreciable photoelectrochemical H2 evolution was observed over the modified electrode under photoirradiation by simulated sunlight with application of a bias potential of 0 VRHE.

