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Design of a 3000-Pixel Transition-Edge Sensor X-Ray Spectrometer for Microcircuit Tomography.

Paul Szypryt1, Douglas A Bennett2, William J Boone3

  • 1National Institute of Standards and Technology, Boulder, CO 80305, USA.

IEEE Transactions on Applied Superconductivity : a Publication of the IEEE Superconductivity Committee
|May 9, 2022
PubMed
Summary
This summary is machine-generated.

This study introduces a new non-destructive 3D imaging method for integrated circuits using scanning electron microscopy (SEM) and transition-edge sensor (TES) x-ray spectroscopy. This technique aids in analyzing complex microelectronic structures and defects.

Keywords:
Computed tomographyintegrated circuit measurementsscanning electron microscopytransition-edge sensors

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Area of Science:

  • Materials Science
  • Physics
  • Electrical Engineering

Background:

  • Integrated circuit feature sizes are shrinking, making 3D imaging challenging.
  • 3D imaging is crucial for process development, defect analysis, and quality control of microchips.

Purpose of the Study:

  • To develop a non-destructive, tabletop method for 3D imaging of complex integrated circuits.
  • To overcome the limitations of current imaging techniques for advanced microelectronic devices.

Main Methods:

  • Utilized X-ray tomography combined with a scanning electron microscope (SEM) and a transition-edge sensor (TES) X-ray spectrometer.
  • Generated X-rays in a target layer using a focused SEM electron beam, positioned over the sample.
  • Employed TES spectrometer for high-efficiency X-ray collection and background isolation to analyze material attenuation.

Main Results:

  • Demonstrated the approach on a test sample with ~1 micrometer features using a prototype 240 Mo/Cu bilayer TES instrument.
  • Successfully traced X-ray paths through sample layers to determine material composition via attenuation functions.

Conclusions:

  • The SEM-TES X-ray tomography approach offers a viable solution for non-destructive 3D imaging of microelectronic circuits.
  • An upcoming upgrade to a 3000 Mo/Au bilayer TES spectrometer is expected to significantly enhance imaging speed by up to 60x.