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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Accessing new 2D semiconductors with optical band gap: synthesis of iron-intercalated titanium diselenide thin films
Clara Sanchez-Perez1,2, Caroline E Knapp1, Ross H Colman3
1University College London, Department of Chemistry 20 Gordon St London WC1H 0AJ UK c.j.carmalt@ucl.ac.uk.
Abstract:
Fe-doped TiSe2 thin-films were synthesized via low pressure chemical vapor deposition (LPCVD) of a single source precursor: [Fe(η5-C5H4Se)2Ti(η5-C5H5)2]2 (1). Samples were heated at 1000 °C for 1-18 h and cooled to room temperature following two different protocols, which promoted the formation of different phases. The resulting films were analyzed by grazing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) and UV/vis spectroscopy. An investigation of the Fe doping limit from a parallel pyrolysis study of Fe TiSe2 powders produced in situ during LPCVD depositions has shown an increase in the Fe-TiSe2-Fe layer width with Fe at% increase. Powders were analyzed using powder X-ray diffraction (PXRD) involving Rietveld refinement and XPS. UV/vis measurements of the semiconducting thin films show a shift in band gap with iron doping from 0.1 eV (TiSe2) to 1.46 eV (Fe0.46TiSe2).
