Optimized SnO₂ Thin Films: Correlating Solution Chemistry and Deposition Conditions with Optoelectronic Properties

The ability to deposit high-quality SnO₂ thin films using simple, scalable techniques such as aerosol-assisted chemical vapor deposition (AACVD) has increased its potential for optoelectronic applications, including photovoltaics, displays, and smart windows. However, optimizing the structural and electronic properties of SnO₂ requires a deeper understanding of how deposition parameters influence film growth. To the best of our knowledge, the optimization of SnO₂ films using SnCl₄ as a precursor via AACVD has been largely overlooked in the literature. This study addresses that gap by selectively investigating the effects of solvent composition, deposition temperature, and misting time on the microstructure, optical transparency, and electrical performance of the SnO₂ films. Residual chlorine in the films was detected and quantified. The results demonstrate that careful control of solution chemistry and deposition conditions enabled the fabrication of SnO₂ films with high transparency and low resistivity, comparable to those of doped systems. Importantly, these insights can also pave the way for further optimization of commercially available fluorine-doped tin oxide (FTO) films, which are widely deposited via CVD, extending the industrial relevance of this work.