High sensitivity glucose detection at extremely low concentrations using a MoS₂-based field-effect transistor

In recent years, molybdenum disulfide (MoS₂) based field-effect transistors (FETs) have attracted much attention because of the unique properties of MoS₂ nano-materials as an ideal channel material. Using a MoS₂ FET as a glucose solution biosensor has the advantages of high sensitivity and rapid response. This paper is concerned with the fabrication of a bilayer MoS₂-based FET and the study of its application in the high sensitivity detection of an extremely low concentration glucose solution. It was found that the source-drain current (I _ds) increases as the concentration of the glucose solution increases at the same gate voltage (V _gs) and drain voltage (V _ds). The sensitivity of the biosensor as high as 260.75 mA mM^-1 has been calculated and the detection limit of 300 nM was measured. The unknown concentration of a glucose solution was also detected using data based on the relationship between I _ds and glucose solution concentration. In addition, many significant advantages of the biosensor were observed, such as short response time (<1 s), good stability, wide linear detection range (300 nM to 30 mM) and the micro-detection of glucose solutions. These unique properties make the bilayer MoS₂-based FET a great potential candidate for next generation biosensors.