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Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell
Shi-Xiang Chen1, Sheng-Po Chang1, Wei-Kang Hsieh1
1Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University Tainan 70101 Taiwan changsp@mail.ncku.edu.tw.
RSC Advances
|May 11, 2022
Summary
Researchers developed a novel zinc titanate (Zn2TiO4) based resistive random-access memory (RRAM) exhibiting multilevel memory effects. This RRAM shows promising characteristics for non-volatile memory applications.
Area of Science:
- Materials Science
- Solid-State Electronics
- Nanotechnology
Background:
- Resistive random-access memory (RRAM) offers a promising alternative for next-generation non-volatile memory technologies.
- Developing novel materials with stable multilevel resistive switching characteristics is crucial for enhancing memory density and functionality.
Purpose of the Study:
- To investigate the fabrication and device characteristics of ITO/Zn2TiO4/Pt RRAM.
- To explore the multilevel memory effect and its underlying mechanisms in Zn2TiO4-based devices.
- To demonstrate the potential of zinc titanate for non-volatile memory applications.
Main Methods:
- Fabrication of Indium Tin Oxide (ITO)/Zinc Titanate (Zn2TiO4)/Platinum (Pt) thin-film devices.
- Characterization of resistive switching behavior under varying current compliance values.
- Analysis of device performance, including retention, set/reset voltages, and operation voltages.
- Investigation of multilevel carrier conduction mechanisms.
Main Results:
- Achieved four distinct resistive states in ITO/Zn2TiO4/Pt RRAM at room temperature.
- Demonstrated excellent retention characteristics, with states distinguishable after 10,000 s at 100 mV read voltage.
- Observed stable set and reset voltages within ±1 V, indicating low operation voltage requirements.
- Attributed multilevel memory effect to radial filament growth and formation of conductive filaments.
Conclusions:
- Zinc titanate (Zn2TiO4) is successfully applied in non-volatile RRAM for the first time.
- The developed RRAM exhibits stable multilevel resistive switching, suitable for advanced memory applications.
- The study elucidates the carrier conduction mechanisms responsible for multilevel switching in Zn2TiO4-based RRAM.
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