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Updated: Sep 23, 2025

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Triangular radial Nb2O5 nanorod growth on c-plane sapphire for ultraviolet-radiation detection
Kwan-Woo Kim1, Bum Jun Kim2, Sang Hoon Lee1
1School of Advanced Materials Science and Engineering, Sungkyunkwan University Suwon 16419 Korea jy.choi@skku.edu.
Abstract:
Nb2O5 nanostructures with excellent crystallinities were grown on c-plane sapphire and employed for ultraviolet-(UV)-radiation detection. The triangular radial Nb2O5 grown on the c-sapphire substrate had a 6-fold symmetry with domain matching epitaxy on the substrate. Owing to the radial growth, the nanorods naturally connected when the deposition time increased. This structure can be used as a UV-detector directly by depositing macroscale electrodes without separation of a single nanorod and e-beam lithography process. It was confirmed that electric reactions occur at different UV irradiation wavelengths (254 nm and 365 nm).
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