Trench field-effect transistors integrated in a microfluidic channel and design considerations for charge detection

Field-effect transistors (FETs) combined with a microfluidic system allow for the electrical detection of charged materials moving in a microfluidic channel. Here, we demonstrate trench-shaped silicon FETs with the combination of a microfluidic channel that can be used for simultaneous electrical and optical detection of charged fluorescent beads. The n-channel silicon trench FETs have a maximum transconductance of 1.83 × 10^-5 S at near-zero gate bias voltage, which is beneficial for the high sensitivity of electrical detection. The optical transparency and physical robustness of the integrated microfluidic channel are achieved by a polydimethylsiloxane (PDMS)/glass hybrid cover combining the good sealing characteristics of PDMS, and the thin and flat properties of glass. Device evaluation methodologies and measurement approaches are also presented demonstrating a synchronized time-lapse imaging and electronic detection of bead transport. The proposed device and design consideration could advance the promise of electronic sensing to measure potential differences induced by charged analytes.