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Updated: Sep 22, 2025

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
Single crystal growth and physical properties of layered compound SrCdBi2
Yi Yang1, Yu Fu2, Wenliang Zhu3
1School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, People's Republic of China.
None:
We have grown the high quality single crystals of SrCdBi2successfully and investigated the physical properties systematically through measurements of magnetoresistance (MR), Hall effect, magnetic susceptibility, and specific heat measurements. The compound is a nonmagnetic 112-type pnictide with a Bi square net layer, which is potential for hosting Dirac fermions. We found that it exhibited metallic behavior with an anomaly appearing at around 210 K. MR study reveal that the electronic structure of SrCdBi2is quasi-two-dimensional. At low temperatures, we observed magnetic field induced metal-to-insulator-like transition and resistivity plateau, nonsaturating quasilinear MR, and high carrier mobility in magnetotransport measurements, which indicate the possible existence of nearly massless Dirac fermions in SrCdBi2. The anomaly at around 210 K can be observed in resistivity, Hall effect, and magnetic susceptibility, but cannot be detected in heat capacity. This implies the anomaly might be caused by domain formation or disorder. We found that the nonsaturating linear MR in SrCdBi2is likely caused by both of the quantum linear dispersion and the classical disorder. Our findings suggest that SrCdBi2is a natural experimental platform for realizing the topological properties of nonmagnetic 112-type pnictides.
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