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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Recent Progress in 1D Contacts for 2D-Material-Based Devices.

Min Sup Choi1, Nasir Ali1, Tien Dat Ngo1

  • 1SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, 16419, Korea.

Advanced Materials (Deerfield Beach, Fla.)
|May 20, 2022
PubMed
Summary
This summary is machine-generated.

1D edge contacts eliminate the van der Waals gap in 2D materials, overcoming Schottky barriers and Fermi-level pinning. This enables high-performance quantum devices with enhanced carrier mobility and uniform transport.

Keywords:
1D edge contacts2D materialscontact resistancelateral heterostructuresquantum devices

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Area of Science:

  • Materials Science
  • Quantum Computing
  • Nanotechnology

Background:

  • Two-dimensional materials (2DMs) are promising for quantum devices but suffer from high contact resistance due to van der Waals gaps at metal interfaces.
  • These gaps cause Schottky barriers and Fermi-level pinning, limiting electronic mobility in 2DM-based devices.

Purpose of the Study:

  • To review van der Waals-gap-free 1D edge contacts for 2D devices.
  • To discuss the advantages of 1D contacts, including suppressed carrier scattering and uniform transport.
  • To explore the development of electronic, optoelectronic, and quantum devices using 1D contacts.

Main Methods:

  • Review of existing 1D contact methods.
  • Detailed examination of seamless lateral contacts for large-scale production.
  • Discussion of device applications and reliability challenges.

Main Results:

  • 1D edge contacts effectively eliminate the van der Waals gap, suppressing Schottky barriers and Fermi-level pinning.
  • 1D contacts facilitate uniform carrier transport in multilayer 2DM channels.
  • This approach enables high-density transistor integration and the fabrication of double-gate transistors for quantum phenomena.

Conclusions:

  • 1D edge contacts are crucial for overcoming limitations in 2D material-based quantum devices.
  • Seamless lateral contacts offer a promising route for scalable 2D device manufacturing.
  • Further research on the reliability of 1D contacts is needed for future device development.