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Self-Assembled Size-Tunable Microlight-Emitting Diodes Using Multiple Sapphire Nanomembranes.
Jehong Oh1, Dongho Kim2, Duyoung Yang1
1Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826 Republic of Korea.
ACS Applied Materials & Interfaces
|May 27, 2022
Summary
Multiple-sapphire nanomembrane (MSNM) technology enables efficient micro-light-emitting diode (Micro-LED) fabrication by eliminating singulation. This breakthrough addresses key commercialization challenges for advanced display technologies.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Devices
Background:
- Micro-light-emitting diodes (Micro-LEDs) are crucial for future high-performance displays.
- Current Micro-LED commercialization faces hurdles like etching loss, reduced efficiency, high costs, and lengthy transfer processes due to singulation.
Purpose of the Study:
- To develop a novel technology for Micro-LED fabrication and transfer that overcomes existing commercialization barriers.
- To demonstrate a singulation-free process for producing Micro-LED arrays with improved performance.
Main Methods:
- Developed multiple-sapphire nanomembrane (MSNM) technology for Micro-LED fabrication.
- Utilized pendeo-epitaxy and coalescence of GaN on spaced SNMs to form individual Micro-LEDs.
- Fabricated Micro-LEDs of various sizes (20x20 μm², 40x40 μm², 100x100 μm²) using the MSNM membrane design.
Main Results:
- Successfully fabricated Micro-LEDs without a singulation procedure, enabling rapid array transfer.
- The 100x100 μm² Micro-LEDs showed an 80.6% stress relief and a 58.7% reduction in threading dislocation density compared to reference samples.
- Demonstrated successful transfer of MSNM Micro-LED arrays of varied chip sizes to a backplane and fabrication of a vertical structure LED with low operation voltage.
Conclusions:
- MSNM technology offers a promising pathway for the commercialization of Micro-LED technology by simplifying fabrication and enhancing device performance.
- The developed method effectively reduces defects and stress, leading to improved Micro-LED characteristics.
- This approach facilitates the production of high-quality Micro-LEDs for next-generation displays.

