Squeezing indium arsenide single crystal to ultrafine nanostructured compact bulk

Reciprocating pressure-induced phase transition (RPPT) has been proposed as a new approach to synthesize nanostructured bulk materials with clean grain boundary interfaces for structures that undergo reversible pressure-induced phase transitions. The modulation effects on grain size under different cycle numbers of RPPT for InAs were investigated and the initial single-crystal bulk, with a dimensional size of about 30 μm, was transformed into a nanostructure with an average grain size of 7 nm by the utilization of the in situ high-pressure diamond anvil cell (DAC) technique. To verify the DAC findings, compact nanostructured bulk InAs with grain sizes ranging from 2-20 nm (average = 8 nm) and large dimensions (3.2 mm × 3.2 mm × 0.5 mm) was successfully synthesized from single-crystal InAs using a large volume press (LVP). The smaller work function (3.86 eV) and larger bandgap energy (2.64 eV) of the compact nanostructured bulk InAs phase compared to those of single-crystal InAs demonstrated that the nanostructure affected the macroscopic properties of InAs. The findings confirm the feasibility of synthesizing nanostructured bulk materials via RPPT.