Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Van der Waals Interactions01:24

Van der Waals Interactions

66.2K
Atoms and molecules interact with each other through intermolecular forces. These electrostatic forces arise from attractive or repulsive interactions between particles with permanent, partial, or temporary charges. The intermolecular forces between neutral atoms and molecules are ion–dipole, dipole–dipole, and dispersion forces, collectively known as van der Waals forces.
66.2K
P-N junction01:11

P-N junction

671
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
671
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

502
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
502
Van der Waals Equation01:10

Van der Waals Equation

4.5K
The ideal gas law is an approximation that works well at high temperatures and low pressures. The van der Waals equation of state (named after the Dutch physicist Johannes van der Waals, 1837−1923) improves it by considering two factors.
First, the attractive forces between molecules, which are stronger at higher densities and reduce the pressure, are considered by adding to the pressure a term equal to the square of the molar density multiplied by a positive coefficient a. Second, the volume...
4.5K
Biasing of P-N Junction01:16

Biasing of P-N Junction

814
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
814
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

331
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
331

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Thermoelectricity of Moiré Heavy Fermions in MoTe_{2}/WSe_{2} Bilayers.

Physical review letters·2026
Same author

Imaging the flat bands of magic-angle graphene reshaped by interactions.

Nature·2026
Same author

A compact low-power valveless piezoelectric micropump with a nested rectification structure.

Lab on a chip·2026
Same author

Voxel-based model predicts proton-induced brain necrosis using let and ventricular distance.

Medical dosimetry : official journal of the American Association of Medical Dosimetrists·2026
Same author

Transient Spin Labeling of Plastics with Chlorine Dioxide.

ACS physical chemistry Au·2026
Same author

Electric-Field-Tuned Consecutive Topological Phase Transitions between Distinct Correlated Insulators in Moiré MoTe_{2}/WSe_{2} Heterobilayer.

Physical review letters·2026
Same journal

Intrinsic Superconducting Gap in Bilayer KCa<sub>2</sub>Fe<sub>4</sub>As<sub>4</sub>F<sub>2</sub> and Decoupled Monolayer FeAs.

Nano letters·2026
Same journal

Programmable Hydrogen-Assisted Chemical Vapor Deposition Growth and Bipolar Transport in Two-Dimensional MoO<sub>2</sub> Nanoflakes.

Nano letters·2026
Same journal

A Curvature-Modulated Strategy for Single-Atom Catalysts toward Reciprocal Regulation in Li-S Batteries.

Nano letters·2026
Same journal

Vacuum Pyrolysis Engineered CoSb/C Scaffold for Sodium Metal Anodes with Sodiophilic and Superionic Interphase.

Nano letters·2026
Same journal

Hexagonal SiGe Quantum Dots in Nanowires.

Nano letters·2026
Same journal

Monolithic Axial InGaAs Quantum Dot Emitters in GaAs-Based Nanowires via Sb-Mediated Facet Engineering.

Nano letters·2026
See all related articles

Related Experiment Video

Updated: Sep 7, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.7K

van der Waals π Josephson Junctions.

Kaifei Kang1, Helmuth Berger2, Kenji Watanabe3

  • 1School of Applied and Engineering Physics, Cornell University, Ithaca 14850, New York, United States.

Nano Letters
|June 23, 2022
PubMed
Summary
This summary is machine-generated.

We demonstrate a thickness-driven 0-π transition in superconductor-ferromagnet-superconductor Josephson junctions using NbSe2 and Cr2Ge2Te6. This transition, observed by varying the ferromagnetic semiconductor thickness, indicates the formation of π Josephson junctions.

Keywords:
0-π transitionferromagnetic Josephson junctionsvan der Waals Josephson junctionsπ Josephson junctions

More Related Videos

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.6K
Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

7.7K

Related Experiment Videos

Last Updated: Sep 7, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.7K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.6K
Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

7.7K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Phenomena

Background:

  • Proximity-induced superconductivity in ferromagnets can lead to Cooper pairs with finite momentum.
  • This phenomenon enables Josephson junctions (JJs) with a π phase difference in superconductor-ferromagnet-superconductor heterostructures.
  • Two-dimensional layered materials offer a promising platform for creating atomically sharp π JJs.

Purpose of the Study:

  • To investigate the thickness-driven 0-π transition in Josephson junctions.
  • To explore the potential of NbSe2 (Ising superconductor) and Cr2Ge2Te6 (ferromagnetic semiconductor) for realizing π JJs.
  • To understand the role of nanoscale magnetic domains in the observed phenomena.

Main Methods:

  • Fabrication of superconductor-ferromagnet-superconductor heterostructures using NbSe2 and Cr2Ge2Te6.
  • Systematic variation of the Cr2Ge2Te6 weak link thickness.
  • Measurement of supercurrent and critical current as a function of thickness and in-plane magnetic field.

Main Results:

  • Observation of a thickness-driven 0-π transition in the Josephson junctions at a critical Cr2Ge2Te6 thickness of approximately 8 nm.
  • A vanishing supercurrent at the critical thickness, followed by a re-entrant supercurrent.
  • Unusual supercurrent interference patterns near the critical thickness, including vanishing critical current at zero in-plane magnetic field.

Conclusions:

  • The results demonstrate the feasibility of achieving 0-π Josephson junctions using 2D layered materials.
  • The observed phenomena are attributed to the formation of nanoscale magnetic domains within the Cr2Ge2Te6 layer.
  • This work opens new avenues for exploring exotic quantum phenomena in superconductor-ferromagnetic semiconductor heterostructures.