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Published on: March 9, 2019
Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics
Mi Lin1, Wenyao Luo1, Luping Li1
1School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China.
A new memristor emulator using negative differential resistance (NDR) offers a flexible and cost-effective alternative for memristor research. This controllable threshold circuit enables adaptable memristor circuit designs.
Area of Science:
- Electronics
- Materials Science
- Solid-State Physics
Background:
- High manufacturing costs of memristors necessitate cost-effective emulators for research.
- Memristor emulators are crucial for advancing memristor-based applications.
Purpose of the Study:
- To propose a novel threshold-type memristor emulator.
- To demonstrate a flexible and controllable memristor circuit design.
Main Methods:
- Utilizing negative differential resistance (NDR) characteristics.
- Employing a R-HBT (Resistor-Heterojunction Bipolar Transistor) network as the core component.
- Implementing a control voltage for threshold adjustment.
Main Results:
- The proposed memristor emulator exhibits controllable threshold characteristics.
- The circuit achieves an operation frequency of approximately 250 kHz.
- Experimental validation confirms the emulator's feasibility and correctness.
Conclusions:
- The NDR-based memristor emulator provides a flexible and feasible alternative to traditional memristors.
- Controllable threshold design enhances adaptability in memristor circuit applications.
- This approach reduces reliance on expensive memristor fabrication.
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