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Compact Integration of Hydrogen-Resistant a-InGaZnO and Poly-Si Thin-Film Transistors

Yunping Wang1, Yuheng Zhou1, Zhihe Xia2

  • 1School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.

Micromachines
|June 24, 2022
PubMed

Keywords:
amorphous indium–gallium–zinc oxide (a–IGZO)diffusion barrierfluorinationhydrogen–resistantlow–temperature poly–Si oxide (LTPO)metal–oxide–on–Si (MOOS)nitrous oxide (N2O)thin–film transistors (TFT)

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