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Scanning Deposition Method for Large-Area Diamond Film Synthesis Using Multiple Microwave Plasma Sources
Seung Pyo Hong1, Kang-Il Lee1, Hyun Jong You1
1Institute of Plasma Technology, Korea Institute of Fusion Energy, 37 Dongjangsan-ro, Gunsan-si 54004, Jeollabuk-do, Korea.
Nanomaterials (Basel, Switzerland)
|June 24, 2022
Summary
Researchers developed a novel method for synthesizing large-area diamond films using multiple point plasma sources. This technique enhances uniformity and grain distribution for next-generation semiconductor applications.
Area of Science:
- Materials Science
- Chemical Engineering
- Semiconductor Technology
Background:
- Growing demand for synthetic diamonds in advanced semiconductor devices.
- Microwave plasma chemical vapor deposition (MPCVD) is a key technique for diamond film synthesis.
- Existing low-pressure resonant cavity MPCVD methods require improvements in scalable area production.
Purpose of the Study:
- To develop a large-area diamond synthesis method.
- To improve the scalability of high-quality diamond film production.
- To address limitations in the resulting area of current MPCVD techniques.
Main Methods:
- Arrangement of multiple point plasma sources for processing small areas.
- Wafer scanning technique to achieve large-area synthesis.
- Utilizing a unit combination of three plasma sources for uniformity testing.
Main Results:
- Achieved diamond film thickness uniformity of ±6.25% over a 70 mm wafer width.
- Verified even distribution of diamond grains (0.1-1 μm) using field-emission scanning electron microscopy.
- Demonstrated the feasibility of a novel large-area diamond synthesis approach.
Conclusions:
- The proposed method offers a scalable solution for large-area synthetic diamond production.
- This technique is promising for next-generation semiconductor device fabrication.
- Further expansion of the method can lead to industrial-scale manufacturing of high-quality diamond films.
