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Updated: Sep 6, 2025
Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Manipulation of 2DEG at double-doped high-entropy heterointerfaces
Hang Yin1, Ruishu Yang1, Shuanhu Wang1
1Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China. jinkx@nwpu.edu.cn.
Abstract:
Chemical doping is a dominating method for manipulating oxide two-dimensional electron gas (2DEG). However, enhancing the doping level while maintaining the metallic conduction remains a challenge, which limits detailed knowledge of 2DEG manipulation. Herein, we propose a concept of high-entropy heterointerface, which consists of a complex oxide (containing at least 5 elements) at either or both sides of the interface. By doubly doping Sr and Mn elements in the Nd and Al sites of NdAlO3, we grow Nd1-SrAl1-MnO3 (NSAMO) films onto SrTiO3 (STO) substrates to fabricate NSAMO/STO high-entropy heterointerfaces with different thicknesses (2-30 nm) and a wide range of doping ratios x (0.14-0.56). The 2DEG conducting behavior is maintained until x = 0.42, which is higher compared with similar studies. The varying x results in the coexistence of rich properties like a weak anti-localization (0.14-0.42), abnormal Hall effect (0.28 & 0.42), Lifshitz transition (0.42) and stable structure. These results confirm the potential of this strategy to tailor 2DEG in all-oxide interfaces.
