Waveguide-Integrated PdSe₂ Photodetector over a Broad Infrared Wavelength Range

Area of Science:

• Photonics and Materials Science
• Optoelectronics and Nanotechnology

Background:

• Hybrid integration of van der Waals materials on photonic platforms is crucial for advanced integrated photonic circuits.
• Developing waveguide-integrated photodetectors for full optical telecommunication and mid-infrared bands using transition metal dichalcogenides remains challenging.

Purpose of the Study:

• To develop and characterize a novel waveguide-integrated photodetector using palladium selenide (PdSe2) on a silicon platform.
• To assess the performance of PdSe2 photodetectors across a broad infrared wavelength range.

Main Methods:

• Integration of PdSe2 with silicon waveguides.
• On-chip photodetection measurements.
• Characterization of responsivity, noise-equivalent power, 3-dB bandwidth, and data rate.

Main Results:

• Achieved high responsivity from 1260 to 1565 nm.
• Demonstrated a low noise-equivalent power of 4.0 pW·Hz^-0.5.
• Obtained a 3-dB bandwidth of 1.5 GHz and a data rate of 2.5 Gbit·s^-1.

Conclusions:

• PdSe2 integration with silicon waveguides enables high-performance on-chip photodetection.
• These photodetectors show significant potential for applications in sensing and spectroscopy over a broad infrared range.
• This work provides new insights into integrating novel van der Waals materials for next-generation photonic circuits.