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Updated: Sep 5, 2025

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Norah Alwadai1, Nigza Saleman2, Zainab Mufarreh Elqahtani1
1Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia.
Surface plasmon resonance in Gallium Nitride (GaN) nanowires was studied. Increasing nanowire number and coupling enhances plasmon flux density, enabling tunable plasmonics for novel applications.
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