Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

727
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
727
MOSFET Amplifiers01:17

MOSFET Amplifiers

219
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
219
Small-Signal Analysis of BJT Amplifiers01:21

Small-Signal Analysis of BJT Amplifiers

1.3K
Small signal analysis is a fundamental approach used in electronics to understand how a Bipolar Junction Transistor (BJT) amplifier processes signals. In the active region, the BJT is designed for linear amplification. The transistor's behavior under these conditions is governed by its instantaneous base-emitter voltage VBE, a sum of the DC bias VBE, and a small AC signal VBE, resulting in the collector current iC. Here, the collector current has a DC component and an AC component.
1.3K
BJT Amplifiers01:14

BJT Amplifiers

589
Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
589
Small-signal Diode Model01:18

Small-signal Diode Model

1000
In analyzing the behavior of diodes in circuits, the relationship between the current through a diode and the voltage across it is of particular interest, especially when considering the effect of a direct current (DC) bias voltage. When applied, this DC bias influences the diode's operating point, known as the Q point, around which the current-voltage (I-V) characteristic of the diode exhibits exponential behavior. Introducing a small, time-varying signal on top of this bias aids in...
1000
Cut-off Frequency of BJT01:17

Cut-off Frequency of BJT

875
Cut-off frequencies in Bipolar Junction Transistors (BJTs) mark the transition between the signal's pass band and stop band, influencing their performance in amplifying or attenuating frequencies. These frequencies are crucial for designing BJTs to meet specific operational requirements in electronic circuits.
Alpha Cut-Off Frequency: Pertinent to the common-base configuration, the alpha cut-off frequency defines the upper-frequency limit at which the current gain, alpha, remains stable. As...
875

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Effect of materials with different permittivity on the sensing depth of open-ended coaxial probes at different frequencies.

The Review of scientific instruments·2025
Same author

A Characterizing Method of Carbon Nanotubes in Powder Form with Different Packing Densities.

Micromachines·2025
Same author

A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques.

Micromachines·2024
Same author

Investigation and Modeling of the Behavior of Temperature Characteristics of 0.3-1.1 GHz Complementary Metal Oxide Semiconductor Class-A Broadband Power Amplifiers.

Micromachines·2024
Same author

CS-GA-XGBoost-Based Model for a Radio-Frequency Power Amplifier under Different Temperatures.

Micromachines·2023
Same author

A Mesh Space Mapping Modeling Method with Mesh Deformation for Microwave Components.

Micromachines·2023

Related Experiment Video

Updated: Sep 3, 2025

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.2K

Support Vector Machine-Based Model for 2.5-5.2 GHz CMOS Power Amplifier.

Shaohua Zhou1,2, Cheng Yang1,2, Jian Wang1,2

  • 1School of Microelectronics, Tianjin University, Tianjin 300072, China.

Micromachines
|July 27, 2022
PubMed
Summary
This summary is machine-generated.

This study optimized power amplifier (PA) modeling by using only 75% of experimental data with support vector machines (SVM). This reduces measurement costs and time for PA specification degradation experiments.

Keywords:
PASVMcomplementary metal oxide semiconductor (CMOS)modeltemperature

More Related Videos

Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

8.0K
Continuous-Wave Propagation Channel-Sounding Measurement System - Testing, Verification, and Measurements
09:36

Continuous-Wave Propagation Channel-Sounding Measurement System - Testing, Verification, and Measurements

Published on: June 25, 2021

3.2K

Related Experiment Videos

Last Updated: Sep 3, 2025

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.2K
Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

8.0K
Continuous-Wave Propagation Channel-Sounding Measurement System - Testing, Verification, and Measurements
09:36

Continuous-Wave Propagation Channel-Sounding Measurement System - Testing, Verification, and Measurements

Published on: June 25, 2021

3.2K

Area of Science:

  • Electrical Engineering
  • Wireless Communication Systems
  • Machine Learning Applications

Background:

  • Power amplifiers (PAs) are critical components in wireless communication systems, directly impacting system performance and stability.
  • PA specifications are sensitive to temperature variations, necessitating accurate modeling for reliable operation.
  • Optimizing the amount of experimental data for Support Vector Machine (SVM) modeling is crucial for efficiency.

Purpose of the Study:

  • To investigate the impact of varying training data quantities on SVM model accuracy for PA temperature characteristics.
  • To determine the minimum experimental data required for effective PA specification degradation modeling.
  • To reduce measurement costs and time in PA performance evaluation.

Main Methods:

  • Utilized Support Vector Machine (SVM) to model the temperature-dependent characteristics of power amplifiers.
  • Systematically varied the percentage of experimental data used for SVM model training.
  • Evaluated model performance based on the amount of training data employed.

Main Results:

  • Achieved satisfactory modeling of PA temperature characteristics using only 75% of the available experimental data.
  • Demonstrated that 25% of measurement points in PA specification degradation experiments can be reduced without compromising model requirements.
  • Identified an optimal data subset for SVM modeling that meets performance criteria.

Conclusions:

  • Reduced experimental data requirements for PA modeling using SVM, leading to significant cost and time savings.
  • The study provides a practical guideline for optimizing experimental design in wireless communication system testing.
  • Efficient data utilization in SVM modeling enhances the feasibility of characterizing PA degradation under temperature variations.