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Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction
Tao Sun1, Xiaorong Luo2, Jie Wei1
1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Nanoscale Research Letters
|August 24, 2022
Summary
A novel fin-shaped non-junction diode integrated into Gallium Nitride (GaN) power MOSFETs significantly enhances reverse conduction and switching performance. This design reduces reverse turn-on voltage and switching losses, improving overall efficiency for power electronics applications.
Area of Science:
- Power Electronics
- Semiconductor Devices
- Materials Science
Background:
- Conventional Gallium Nitride (GaN) power MOSFETs often rely on body diodes or external Schottky diodes for freewheeling diode (FWD) functionality, presenting limitations in reverse conduction and switching characteristics.
- Optimizing the integration of diodes within MOSFET structures is crucial for enhancing the performance of power electronic systems.
Purpose of the Study:
- To propose and analyze a novel vertical GaN power MOSFET with an integrated fin-shaped non-junction diode (FDMOS).
- To investigate the static and dynamic characteristics of the FDMOS and compare its performance against conventional MOSFETs with body diodes.
Main Methods:
- Utilized Sentaurus TCAD simulations to model and analyze the electrical behavior of the FDMOS.
- Compared key performance metrics including reverse turn-on voltage (VON), reverse recovery charge (Qrr), gate charge (QGD), and switching losses (Eon, Eoff) against conventional MOSFETs.
Main Results:
- The FDMOS achieved a significantly lower reverse turn-on voltage (VON) of 0.66 V, a 77.9% reduction compared to conventional MOSFETs.
- Reverse recovery charge (Qrr) was reduced to 1.36 μC, and gate charge (QGD) decreased by 56.8%, leading to substantial reductions in turn-on (33.8%) and turn-off (53.8%) losses.
- The integrated design also offers potential benefits in reducing parasitic inductance and overall chip area.
Conclusions:
- The integrated fin-shaped non-junction diode (FDMOS) offers superior reverse conduction and switching characteristics compared to conventional GaN power MOSFETs.
- This novel structure minimizes switching losses and improves efficiency without compromising performance, paving the way for more advanced power electronic devices.
- The FDMOS design presents a compact and efficient solution for power electronics, potentially reducing system complexity and cost.
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