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Antiferromagnetic Inverse Spin Hall Effect.

Lin Huang1, Yongjian Zhou1, Hongsong Qiu2

  • 1Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)
|September 2, 2022
PubMed
Summary
This summary is machine-generated.

Researchers achieved the antiferromagnetic inverse spin Hall effect by controlling Néel vectors in Mn2Au/[Co/Pd] heterostructures. This breakthrough enables flexible antiferromagnetic spintronics and spin-to-charge conversion.

Keywords:
THz emissionantiferromagnetsinverse spin Hall effectspin Seebeck effect

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Area of Science:

  • Spintronics
  • Condensed Matter Physics
  • Materials Science

Background:

  • The inverse spin Hall effect (ISHE) is crucial for detecting spin currents and has been observed in magnets.
  • Antiferromagnetic Néel-vector-dependent ISHE has remained elusive despite significant pursuit.

Purpose of the Study:

  • To investigate and demonstrate the antiferromagnetic inverse spin Hall effect (ISHE) in Mn2Au/[Co/Pd] heterostructures.
  • To explore the manipulation of spin current conversion using antiferromagnetic Néel vectors.

Main Methods:

  • Utilized terahertz emission and spin Seebeck effect measurements.
  • Fabricated heterostructures with [Co/Pd] for out-of-plane spin current generation and Mn2Au for spin-to-charge conversion.
  • Investigated the influence of Néel vector orientation on ISHE signal strength.

Main Results:

  • Demonstrated ISHE in Mn2Au, where Néel vectors rotate spin polarization, enabling spin-to-charge conversion.
  • Observed a significantly stronger ISHE signal when the converted charge current is parallel to the Néel vector.
  • Showcased the switchability of the Néel vector and the resultant ISHE signals, termed antiferromagnetic inverse spin Hall effect.

Conclusions:

  • Successfully demonstrated the antiferromagnetic inverse spin Hall effect, adding a new phenomenon to the Hall effect family.
  • The findings enhance the flexibility of antiferromagnetic spintronics by enabling control over spin-to-charge conversion.
  • This work paves the way for novel applications utilizing antiferromagnetic materials in spintronic devices.