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Rapid Growth of Monolayer MoSe2 Films for Large-Area Electronics
Danzhen Zhang1,2, Chengyu Wen1,3, John Brandon Mcclimon4
1Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, USA.
Advanced Electronic Materials
|September 16, 2022
Summary
Researchers developed a fast method for growing large, high-quality monolayer molybdenum diselenide (MoSe2) films using spin coating. This breakthrough enables efficient batch fabrication of advanced electronic and optoelectronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Condensed Matter Physics
Background:
- Large-scale growth of semiconducting thin films is crucial for fabricating atomically thin electronic and optoelectronic devices without film transfer.
- Transition metal dichalcogenides (TMDs) like MoSe2 are promising materials for next-generation electronics.
Purpose of the Study:
- To develop an efficient method for rapid, large-area growth of high-quality monolayer MoSe2 films.
- To enable batch fabrication of MoSe2-based electronic devices.
Main Methods:
- Spin coating of a Molybdenum (Mo) precursor assisted by Sodium Chloride (NaCl).
- Rapid thermal annealing for film growth.
- Photolithography for device fabrication.
Main Results:
- Achieved uniform monolayer MoSe2 films up to a few inches in size in just 5 minutes.
- Obtained high-quality films with large grain sizes (up to 120 μm).
- Fabricated field-effect transistors with high carrier mobility (≈27.6 cm2 V−1 s−1) and on/off ratios (≈105).
Conclusions:
- The developed method allows for efficient batch production of uniform thin transition metal dichalcogenide films.
- This technique promotes the large-scale application of MoSe2 in electronics and optoelectronics.
