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Updated: Aug 28, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Analysis of nonlinear characteristics of a graphene based four-terminal ballistic rectifier using a drift-diffusion
Ankur Garg1, Neelu Jain1, Sanjeev Kumar2
1Department of Electronics and Communication Engineering, Punjab Engineering College (Deemed to be University) Sector-12 Chandigarh-160012 India arun@pec.ac.in.
Abstract:
In this study, rectification behavior and noise spectra of a graphene based four-terminal ballistic rectifier are reported utilizing semi-classical drift-diffusion 3D modeling. The room temperature DC and RF characteristics of the novel rectifier are demonstrated considering the traps in the material similar to a real device, reducing the rectification efficiency from 0.5% to 0.35%. The responsivity and noise equivalent power of about 89.21 mV mW-1 and 97.52 pW Hz-1/2, respectively, are obtained for different frequencies varying from 50 Hz to 1 THz. Furthermore, the noise spectral analysis of the device predicts a minimum low frequency noise, which depends upon the carrier concentration inside the device active region rather than mobility, and hence enables potential applications as THz detectors for imaging.
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