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Updated: Aug 28, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication
Thuy Thi Thanh Pham1, Duy Phu Tran1, Benjamin Thierry1
1Future Industries Institute, ARC Centre of Excellence in Convergent Bio-Nano Science and Technology, University of South Australia Mawson Lakes Campus Mawson Lakes South Australia 5095 Australia benjamin.thierry@unisa.edu.au.
Abstract:
Nanostructured field effect transistor (FET) based sensors have emerged as a powerful bioanalytical technology. However, performance variations across multiple devices and between fabrication batches inevitably exist and present a significant challenge holding back the translation of this cutting-edge technology. We report an optimized and cost-effective fabrication process for high-performance indium oxide nanoribbon FET with a steep subthreshold swing of 80 mV per decade. Through systematic electrical characterizations of 57 indium oxide nanoribbon FETs from different batches, we demonstrate an optimal operation point within the subthreshold regime that mitigates the issue of device-to-device performance variation. A non-linear pH sensing of the fabricated indium oxide nanoribbon FETs is also presented.
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