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Electrically-generated memristor based on inkjet printed silver nanoparticles.

Kyung Jean Yoon^1,2, Jin-Woo Han¹, Dong-Il Moon¹

¹Center for Nanotechnology, NASA Ames Research Center Moffett Field CA 94035 USA jin-woo.han@nasa.gov.

Nanoscale Advances

|September 22, 2022

Summary

This summary is machine-generated.

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Researchers developed a novel method to create memristor devices using inkjet-printed silver nanoparticles. This technique enables controllable resistive switching behaviors for advanced electronic applications.

Area of Science:

Materials Science
Nanotechnology
Electrical Engineering

Background:

Memristors are crucial for next-generation electronics, but their fabrication often involves complex processes.
Developing cost-effective and versatile memristor fabrication methods is an ongoing challenge.

Purpose of the Study:

To present a new method for electrically inducing memristor performance using inkjet-printed silver nanoparticles.
To investigate the controllable switching behaviors of these novel memristors.

Main Methods:

Inkjet printing of silver nanoparticles onto an hourglass-shaped device.
Applying high current to induce Joule heating and oxidation, forming a metal-electrolyte-metal structure.
Analyzing memristor behavior under varying bias polarities and simulating the underlying mechanisms.

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Main Results:

Electrically induced memristor operation was achieved using a single metal ink.
Controllable switching behaviors, including volatile threshold switching and nonvolatile unipolar/bipolar resistive switching, were observed.
The switching mechanisms were linked to silver nanoparticle migration and redox reactions within the oxide electrolyte.

Conclusions:

The presented method offers a versatile approach for fabricating memristors with tunable properties.
These memristors show potential for low-power flexible memory, crossbar architectures, and synaptic learning applications.