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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Schottky Barrier Diode01:27

Schottky Barrier Diode

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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers.

Sobia Ali Khan1, Fayyaz Hussain2, Daewon Chung3

  • 1A School of Electronics Engineering, Chungbuk National University, Cheongju 28644, Korea.

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|September 23, 2022
PubMed
Summary

This study presents a novel Ni/SiN/BN/p+-Si device exhibiting superior ON/OFF ratio, stability, and low power consumption. The improved performance stems from bilayer structure effects and nitride-related vacancy mechanisms.

Keywords:
boron nitrideresistive switchingself-rectificationsilicon nitride

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Solid-State Physics

Background:

  • Single-layer devices (Ni/SiN/p+-Si, Ni/BN/p+-Si) exhibit limitations in performance metrics.
  • Understanding interfacial effects in multilayer structures is crucial for advanced electronic devices.

Purpose of the Study:

  • To demonstrate a novel Ni/SiN/BN/p+-Si device with enhanced performance.
  • To elucidate the switching mechanism and the role of interfacial properties.
  • To investigate the benefits of bilayer structures for memory applications.

Main Methods:

  • Fabrication of a Ni/SiN/BN/p+-Si device.
  • Performance characterization including ON/OFF ratio, stability, and power consumption.
  • Theoretical investigation of interface charge dynamics and defect creation.

Main Results:

  • The Ni/SiN/BN/p+-Si device shows improved ON/OFF ratio, stability, and low power consumption compared to single-layer devices.
  • The switching mechanism is attributed to trapping and de-trapping via nitride-related vacancies.
  • Higher nonlinearity and rectification ratio in the bilayer device enhance read margin in cross-point arrays.
  • Theoretical analysis reveals interface charge accumulation/depletion in SiN/BN layers contributes to defect creation and improved switching.

Conclusions:

  • The bilayer Ni/SiN/BN/p+-Si structure offers significant performance advantages over single-layer counterparts.
  • Understanding interfacial phenomena is key to optimizing device characteristics.
  • This bilayer structure holds promise for advanced memory applications requiring large read margins.