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High Mobility Two-Dimensional Electron Gas at the BaSnO3/SrNbO3 Interface.

Sharad Mahatara1, Suresh Thapa2, Hanjong Paik3,4

  • 1Department of Physics, New Mexico State University, 1255 N Horseshoe, Las Cruces, New Mexico 88003-8001, United States.

ACS Applied Materials & Interfaces
|September 23, 2022
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Summary
This summary is machine-generated.

High-quality oxide two-dimensional electron gases (2DEGs) were achieved in Barium Strontium Niobate/Barium Tin Oxide (BSO/SNO) superlattices. These interfaces exhibit significant charge transfer, enabling low-loss electronic transport for advanced semiconductor applications.

Keywords:
2DEGScharge transferconduction band minimumelectron densityheterostructure

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Solid-State Chemistry

Background:

  • Oxide two-dimensional electron gases (2DEGs) offer potential for high charge carrier concentrations and low-loss electronic transport.
  • Barium Strontium Niobate (BSO) and Barium Tin Oxide (SNO) are promising materials for such applications.

Purpose of the Study:

  • To investigate the electronic properties of BSO/SNO interfaces for 2DEG formation.
  • To understand the charge transfer mechanisms at these interfaces.
  • To explore the potential for low-loss electronic transport.

Main Methods:

  • First-principles ACBN0 computations were employed to model the electronic structure of BSO/SNO interfaces.
  • Superlattices with intermediate thicknesses (6-unit cell BSO/6-unit cell SNO) were theoretically analyzed.
  • Experimental validation using molecular beam epitaxy (MBE) growth.
  • In situ angle-resolved X-ray photoelectron spectroscopy (ARXPS) was used to measure electron density.

Main Results:

  • ACBN0 computations predicted Nb-4d electron injection into Sn-5s states in BSO.
  • A conduction band minimum of Sn-5s states was observed approximately 1.2 eV below the Fermi level.
  • Calculated electron density in BSO reached ~10^21 cm^-3.
  • Experimental studies confirmed significant charge transfer from SNO to BSO.
  • ARXPS measurements revealed an electron density of approximately 4 × 10^21 cm^-3.

Conclusions:

  • The theoretical predictions and experimental results for BSO/SNO interfaces are consistent.
  • BSO/SNO interfaces represent a novel materials platform for achieving low-loss electron transport in 2DEGs.
  • This research opens avenues for developing next-generation semiconductor devices with enhanced electronic properties.