Two dimensional semiconducting materials for ultimately scaled transistors.

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Two-dimensional (2D) semiconductors offer solutions to the short channel effect in silicon metal-oxide-semiconductor field-effect-transistors (MOSFETs) due to their atomic layering and surface properties.
• Significant advancements in 2D transistor scaling over the past decade have reduced physical gate lengths to sub-nanometer scales, demonstrating superior performance.

Purpose of the Study:

• To review state-of-the-art techniques for creating ultra-scaled 2D transistors.
• To analyze novel configurations achieved through scaling of channel, gate, and contact lengths.
• To identify opportunities and challenges for integrating these transistors into next-generation circuitry.

Main Methods:

• Review of fabrication processes for ultra-scaled 2D transistors.
• Analysis of critical parameters associated with scaling techniques.
• Summarization of merits and drawbacks of various approaches.

Main Results:

• Demonstration of physical gate lengths shrinking from micrometer to sub-one nanometer.
• Superior performance achieved in ultra-scaled 2D transistors.
• Comprehensive overview of fabrication techniques and their outcomes.

Conclusions:

• Ultra-scaled 2D transistors show potential as a replacement for silicon MOSFETs.
• Key opportunities and challenges exist for integrating these devices into heterogeneous circuits.
• Continued research in fabrication and integration is crucial for next-generation electronics.